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| 6MBP75RJ120 IGBT IPM R-series 1200V class Features * Temperature protection provided by directly detecting the junction temperature of the IGBTs * Low power loss and soft switching * High performance and high reliability IGBT with overheating protection * Higher reliability because of a big decrease in number of parts in built-in control circuit 1200V / 75A 6 in one-package Maximum ratings and characteristics Absolute maximum ratings(at Tc=25C unless otherwise specified) Item Bus voltage DC Surge Short operating Symbol VDC VDC(surge) VSC VCES IC ICP -IC PC VCC Vin Iin VALM IALM Tj Topr Tstg Viso Rating Min. Max. 0 0 200 0 -0.5 -0.5 -0.5 -20 -40 900 1000 800 1200 75 150 75 500 20 Vcc+0.5 3 Vcc 20 150 100 125 AC2500 3.5 3.5 Unit V V V V A A A W V V mA V mA C C C V N*m N*m Collector-Emitter voltage *1 Collector current Inverter DC 1ms Duty=76.1% *2 Collector power dissipation One transistor *3 Supply voltage of Pre-Driver *4 Input signal voltage *5 Input signal current Alarm signal voltage *6 Alarm signal current *7 Junction temperature Operating case temperature Storage temperature Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.) Screw torque Terminal (M5) Mounting (M5) Note *1 : Vces shall be applied to the input voltage between terminal P and U or u or W, N and U or V or W *2 : 125C/FWD Rth(j-c)/(Ic x VF MAX)=125/0.73/(75 x 3.0) x 100=76.1% *3 : Pc=125C/IGBT Rth(j-c)=125/0.25=500W [Inverter] *4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13 *5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 16,17,18 and 13. *6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13. *7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19. 6MBP75RJ120 Electrical characteristics (at Tc=Tj=25C, Vcc=15V unless otherwise specified.) Main circuit Item Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Symbol ICES VCE(sat) VF ton toff trr Condition VCE=1200V Vin terminal open. Ic=75A Terminal Chip -Ic=75A Terminal Chip VDC=600V,Tj=125C IC=75A Fig.1, Fig.6 VDC=600V, IF=75A Fig.1, Fig.6 Min. 1.2 Typ. 1.9 2.3 - IGBT-IPM Max. 1.0 2.6 3.0 3.6 0.3 Unit mA V V s Turn-on time Turn-off time Reverse recovery time Inverter Control circuit Item Supply current of P-line side pre-driver(one unit) Supply current of N-line side pre-driver Input signal threshold voltage (on/off) Input zener voltage Alarm signal hold time Symbol Iccp ICCN Vin(th) VZ tALM Condition Switching Trequency : 0 to 15kHz Tc=-20 to 125C Fig.7 ON OFF Rin=20k ohm Tc=-20C Fig.2 Tc=25C Fig.2 Tc=125C Fig.2 Min. Typ. Max. Unit mA mA V V V ms ms ms ohm 18 65 1.00 1.35 1.70 1.25 1.60 1.95 8.0 1.1 2.0 4.0 1425 1500 1575 Limiting Resistor for Alarm RALM Protection Section ( Vcc=15V) Item Over Current Protection Level of Inverter circuit Over Current Protection Delay time SC Protection Delay time IGBT Chip Over Heating Protection Temperature Level Over Heating Protection Hysteresis Over Heating Protection Protection Temperature Level Over Heating Protection Hysteresis Under Voltage Protection Level Under Voltage Protection Hysteresis Symbol IOC tDOC tSC TjOH TjH TcOH TcH VUV VH Condition Tj=125C Tj=125C Tj=125C Fig.4 Surface of IGBT chips Min. 113 150 VDC=0V, IC=0A CaseTemperature 110 11.0 0.2 Typ. 10 Max. 12 125 12.5 Unit A s s C C C C V V 20 20 0.5 Thermal characteristics( Tc=25C) Item Junction to Case thermal resistance *8 Case to fin thermal resistance with compound *8 : (For 1 device, Case is under the device) Inverter IGBT FWD Symbol Rth(j-c) Rth(j-c) Rth(c-f) Min. Typ. 0.05 Max. 0.25 0.73 Unit C/W C/W - C/W Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5) Item Common mode rectangular noise Common mode lightning surge Condition Pulse width 1s, polarity ,10minuets Judge : no over-current, no miss operating Rise time 1.2s, Fall time 50s Interval 20s, 10 times Judge : no over-current, no miss operating Min. 2.0 5.0 Typ. Max. Unit kV kV Recommendable value Item DC Bus Voltage Operating Supply Voltage of Pre-Driver Screw torque (M5) Symbol VDC VCC Min. 13.5 2.5 Typ. 15.0 Max. 800 16.5 3.0 Unit V V Nm Weight Item Weight Symbol Wt Min. Typ. 450 Max. Unit g 6MBP75RJ120 Vin Vin(th) On Vin(th) 90% 50% IGBT-IPM trr Ic 90% 10% ton toff Figure 1. Switching Time Waveform Definitions /Vin Vge (Inside IPM ) Fault (Inside IPM ) off on Gate On Gate Off on off normal alarm tALM > Max. 1 tALM > Max. /ALM 2 t ALM 2ms(typ.) 3 Fault : Over-current,Over-heat or Under-voltage Figure 2. Input/Output Timing Diagram tsc Ic IALM Ic IALM Ic IALM Figure.4 Definition of tsc Vcc 20 k DC 15V P P IPM IPM L + + DC 300V Vin HCPL 4504 VccU DC 15V SW1 20k P IPM U CT GND N Ic VinU GNDU AC200V V DC 15V SW2 20k + Figure 6. Switching Characteristics Test Circuit Vcc VinX GND W 4700p Icc A Noise Vcc P IPM Vin U V W GND N N DC 15V Earth Cooling Fin P.G +8V fsw Figure 5. Noise Test Circuit Figure 7. Icc Test Circuit 6MBP75RJ120 Block diagram P VccU 4 VinU 3 IGBT-IPM ALMU 2 RALM 1.5k GNDU 1 VccV VinV 8 7 Pre - Driver Vz U ALMV 6 RALM 1.5k GNDV 5 VccW VinW ALMW 12 Pre- Driver Vz V 11 10 Pre- Driver RALM 1.5k Vz W GNDW 9 Vcc VinX 14 16 Pre- Driver Vz GND 13 VinY 17 Pre- Driver Vz VinZ 18 Pre- Driver Vz NC VinDB B Pre-drivers include following functions 1.Amplifier for driver 2.Short circuit protection 3.Under voltage lockout circuit 4.Over current protection 5.IGBT chip over heating protection N 15 ALM 19 Ov er heating protection circuit RALM 1.5k Outline drawings, mm 109 95 13.8 _ +0.3 _ +1 _ +0 . 3 66.44 10 _ 6 + 0 . 15 _ +0 . 2 _ 3.22 + 0 . 3 10 _ 6 + 0 . 15 _ +0 . 2 10 _ +0 . 2 12 _ +0 . 25 4- O5 / _ 6 + 0 . 15 _ 2 +0 . 1 2 _ +0.3 1 B _ +0.3 88 _ +1 74 20 10 P 20 N 17 W V U 0.5 0.5 24 26 19- 0.5 26 2- O 2.5 / 6 - M5 7 9 22 +1 . 0 -0.3 22 17 12.5 +1 . 0 -0.3 +1 . 0 -0.2 17 31 - 0 . 3 +0 . 6 Mass : 450g 8 6MBP75RJ120 Characteristics Control circuit characteristics (Respresentative) IGBT-IPM Power supply curr ent vs. Switching fr eque ncy Tj=100C 50 P- side N-side V cc = 17V 2.5 Input signal threshold voltage vs. P ower supply voltage T j= 25 C Tj= 125C Pow er supp ly cur rent : Icc ( mA) 40 Inp ut signa l t hre shold vo lta ge V cc = 15V V cc = 13V 2 : V in(on),V in(of f) ( V) } Vin(off) 1.5 } Vin(on) 30 20 V cc = 17V V cc = 15V 10 V cc = 13V 1 0.5 0 0 5 10 15 20 25 0 12 13 14 15 16 17 18 Sw itc hing f reque nc y : fs w (kHz) Po we r s up ply volta ge : Vc c ( V) U nder voltage vs. J unction tempe ra tur e 14 1 12 U nde r voltage hysterisis vs. Jnction tempe ra tur e Unde r volt ag e : VUVT ( V) 10 8 Un der vo ltage hysterisis : VH (V) 0 .8 0 .6 6 0 .4 4 2 0 .2 0 20 40 60 80 1 00 120 1 40 0 20 Junc tio n tem pe rat ure : Tj (C) Junction temperature : Tj (C) 40 60 80 1 00 120 1 40 Alarm hold time vs. P ower supply voltage 3 2 00 Over heating c haracteris tic s TcOH ,TjOH ,TcH ,TjH vs. Vcc Over he ating pr ote ction : T cO H,TjOH ( C) Ala rm hold time : t AL M (mSe c) 2 .5 Tj= 125 C 2 Tj= 25C 1 .5 TjO H O H hys terisis : Tc H, TjH ( C) 1 50 T cO H 1 00 1 50 T cH,TjH 0 .5 0 12 13 14 15 16 17 18 0 12 13 14 15 16 17 18 Po we r s up ply vo lta ge : Vc c ( V) Po w er supply volt age : Vc c (V) 6MBP75RJ120 Main circuit characteristics (Respresentative) IGBT-IPM C ollector curr ent vs. Collector-E mitte r voltage Tj=2 5 C( C hip) 1 20 Vcc= 17 V 1 00 V cc = 15V V cc = 13V 1 20 C ollector curr ent vs. Collector-E mitte r voltage T j=2 5 C( Terminal) V cc = 15V V cc = 17V 1 00 Co lle cto r Cur rent : Ic (A) 80 Co lle cto r Cur re nt : Ic ( A) V cc= 13 V 80 60 60 40 40 20 20 0 0 0 .5 1 1.5 2 2.5 3 0 0 0 .5 1 1.5 2 2.5 3 C olle ct or- Emitt er vo lta ge : V ce ( V) C olle ct or- Emitt er vo ltage : V ce ( V) Co lle ctor curr ent vs. Colle ctor -E mitte r voltage Tj=12 5 C(C hip) 1 20 V cc = 17V 1 00 Vcc= 15 V Vcc= 13 V 1 20 Co lle ctor curr ent vs. Colle ctor -E mitte r voltage Tj=12 5 C( Terminal) Vcc= 15 V Vcc= 17 V 1 00 Co lle cto r Curre nt : Ic ( A) Co lle cto r Cur re nt : Ic ( A) V cc = 13V 80 80 60 60 40 40 20 20 0 0 0 .5 1 1.5 2 2.5 3 0 0 0 .5 1 1.5 2 2.5 3 C olle ct or- Emitt er vo lta ge : V ce ( V) C ollect or -Emit ter vo lta ge : V ce ( V) Fo rwar d curre nt vs . Fo rwar d voltage (C hip) 1 20 1 25 C 1 00 25C 1 00 1 20 Fo rwar d curre nt vs . Fo rwar d voltage ( Terminal) 1 25 C 25 C Forw ard Current : If (A) F or wa rd Current : I f (A) 0 0 .5 1 1.5 2 2.5 3 80 80 60 60 40 40 20 20 0 0 0 0 .5 1 1.5 2 2.5 3 F orw a rd vo ltag e : V f ( V) F orw a rd vo ltag e : V f ( V) 6MBP75RJ120 IGBT-IPM Switc hing Los s vs. C ollec tor C ur re nt Edc=6 00 V,Vcc=15V ,Tj=25 C 35 35 Switc hing L os s vs. C ollec to r C ur re nt E dc =600V ,Vcc =1 5V,Tj=12 5 C S wit ching lo ss : E on,E off,Er r (mJ/c yc le) Sw it ching loss : E on,Eoff, Er r ( mJ /c ycle) 30 30 Eon 25 25 20 E on 15 20 15 Eo ff 10 Eoff 10 E rr 5 E rr 0 0 20 40 60 80 100 1 20 5 0 0 20 40 60 80 100 1 20 Collector curre nt : I c (A) Colle ctor cur rent : Ic (A) Reversed bias ed safe operating area Vcc=15V,Tj 125 C 105 0 Transient thermal resistance 1 FW D 90 0 T hermal res istance : Rth(j-c) (C/W ) C ollector cu rrent : Ic (A) 75 0 IG BT 60 0 S CS O A (non-repetitive pulse) 0.1 45 0 30 0 15 0 RBS O A (R e petit ive pulse) 0 0 20 0 40 0 600 80 0 1 00 0 1 20 0 140 0 0. 01 0 .001 0.01 0 .1 1 C ollector-E m itte r volta ge : V ce (V) P ulse width :P w (sec) Power der ating fo r IGBT (per device) 6 00 2 00 Power derating for FW D (per device) Co llec te r P ow er Diss ipa tio n : Pc (W ) 5 00 Collec ter P ow er Dissipa tio n : Pc (W ) 1 75 1 50 1 25 1 00 75 50 25 4 00 3 00 2 00 1 00 0 0 20 40 60 80 1 00 1 20 140 1 60 0 0 20 40 60 80 1 00 1 20 140 1 60 Ca se Temper ature : Tc (C) Ca se Temper ature : Tc (C) 6MBP75RJ120 IGBT-IPM S witching time vs . C ollec to r c ur re nt Edc=600V,Vcc=15V,Tj=25 C 1 00 00 1 00 00 S witching time vs . C ollec to r c ur re nt E dc =600V ,V cc =1 5V,Tj=12 5 C Sw itching time : ton,toff,tf (nSec) Sw itching tim e : to n, tof f,tf (nSe c) to ff ton t off 10 00 t on 10 00 tf 1 00 tf 10 1 00 0 20 40 60 80 100 1 20 0 20 40 60 80 100 1 20 C ollec tor curre nt : I c ( A) C ollec tor curre nt : I c ( A) Reverse reco ve ry char acte ris tic s trr,Irr vs. IF 10 00 Reve rs e r ecovery curre nt : I rr(A) Re ve rse r ecove ry tim e : t rr(nSe c) trr125C trr 25 C 1 00 Irr125 C Irr25 C 10 0 20 40 60 80 100 1 20 For ward current : I F( A) |
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